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Preparation of Copper Zinc Tin Sulfide Thin Film S…
Author:SHIChengwu1 2 SHIGaoyang1 2 CHENZhu1 2 SUNRenjie1 2 XIAMei1 2 
Unit: 
Keyword:copper zinc tin sulfide  hydrothermal  thin film 
Classification:TM914
Year,volume(Issue):page number:2011,39(7):70-73
Summary:

Cu2ZnSnS4 (CZTS) semiconducting materials were firstly prepared by a hydrothermal method, and then the thin films were deposited by a dip-coating technique and post-annealed at 400 ℃ in N2 atmosphere. The chemical composition of the CZTS semiconducting materials was determined by X-ray fluorescence spectrometry. The crystal structures, surface morphology and band gaps of the CZTS thin films were characterized by X-ray diffraction, scanning electron microscope and ultraviolet-visible-near infrared spectroscope, respectively. The results show that the chemical composition of the CZTS semiconducting materials is Cu1.90Zn0.94Sn1.00S4.30 in the nearly stoichiometric relation, and the CZTS thin films appear superior crystallinity, uniformity and free-cracks. The direct band gap was 1.51 eV, and it decreased to 1.34 eV after annealing.

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Foundation item:
国家自然科学基金(51072043);“973”计划重大科学问题导向项目(2011CBA00700);安徽省年度重点科研项目计划(2010 AKND0794);合肥工业大学学生创新基金项目(XS2010036,cxsy102084)。
About The Author:
博士,教授
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References:

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