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N~+注入Ti/Si_3N_4的摩擦行为研究
作者:田军 杨晓鸿 陈玉峰 王齐祖 薛群基 
单位:中国科学院兰州化学物理研究所固体润滑开放实验室 兰州大学材料科学系 中国建筑材料科学研究院技术陶瓷研究所 
关键词:离子注入 Ti/Si_3N_4 摩擦学行为 离子束混合 
分类号:TQ174.758.12
出版年,卷(期):页码:1998,26(2):0-0
DOI:
摘要:
研究了Si3N4陶瓷材料及镀膜Ti/Si3N4材料当N+注入前后的摩擦学行为,考察了样品表面划痕轨迹的SEM形貌,结合X射线衍射,对离子注入改性机理和摩擦学性能进行了探讨.在Ti和Si3N4界面上离子的混合及形成Ti2N相使Ti膜的附着力增加
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In this paper, the tribological properties of Si3N4 and Ti/Si3N4 implanted by N ions are studied. The topography of implanting and scratching trace were examined using SEM. By X-ray diffraction for the implanted thin film, the new phase of Ti2N on Ti/Si3N4 layer by N+ implantation was shown. The wear and friction mechanism are also discussed in the paper. Ion beam mixing of interface improves the adhesion between Ti film and Si3N4 substrate.
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参考文献:
1薛群基,刘惠文.陶瓷摩擦学.摩擦学学报,1995;15(4):3762KatoK.Tribologyofceramics.Wear,1990;136:1173王齐祖,陈玉峰.离子束混合及离子注入陶瓷表面改性研究概述.核技术,1994;17(9):5694王齐祖,陈玉峰,王维洁等.离子束混合增强陶瓷基体上金属薄膜附着力的研究.核技术,1997;20(1):13
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