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激光分子束外延工艺用ZnO陶瓷靶材的研究
作者:贺永宁 朱长纯 候洵 杨晓东 
单位:西安交通大学电信学院电子系 西安交通大学电信学院电子系 西安交通大学电信学院电子系 西安交通大学电信学院电子系 西安710049  西安710049  西安710049  西安710049 
关键词:氧化锌陶瓷靶材  激光分子束外延  脉冲激光辐照效应 
分类号:TN304
出版年,卷(期):页码:2005,33(3):299-303
DOI:
摘要:
由改进的电子陶瓷工艺制备了ZnO(99.99%)高纯陶瓷靶材。用激光分子束外延(lasermolecularbeamepitaxy,L MBE))工艺,采用 这种靶材在蓝宝石基片上较低温度下生长了高结晶质量的ZnO半导体光电子薄膜。研究了ZnO高纯陶瓷靶材的烧结机理、微观结构及形貌, 认为靶材的后期烧结速率主要决定于氧空位扩散机制。根据辐照后靶材的电镜分析结果,对L MBE工艺中靶材表面与脉冲激光相互作用过 程中等离子体羽辉的形成过程及其动力学特征进行了研究,认为该等离子体羽辉是激光支持的燃烧波,其波前传播速度为亚声速并且沿靶材 法线方向,粒子的动力学特征使得L MBE工艺适于ZnO薄膜的二维平面生长。
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High quality crystalline zinc oxide thin films were grown on sapphire substrate with lower temperature by laser molecular beam epitaxy (L-MBE) and using a sintered ZnO ceramic as target. The ZnO ceramic targets with high purity of (99.99%) were fabricated through the modified electronic ceramic process in cleaning laboratory. The target was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film on the sapphire substrate. The target shows a polycrystal wurtzite structure while the ZnO thin film shows highly caxis oriented wurtzite crystal structure by X-ray diffraction patterns. The sintering process of high purity of ZnO targets is determined by the O vacancy diffusion sintering mode. The pre- and postablated target surfaces were investigated by scanning electron microscope in sake of the plume formation accompanying pulsed ultraviolet laser ablation from which the ZnO thin film was deposited on the substrate by L-MBE technology.
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基金项目:
教育部“十五”211项目;; 现代信息光子学的基础理论、关键技术和器件的研究项目;; 国家自然科学基金(60476037)资助项目
作者简介:
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参考文献:
[1] LOOKDC.RecentadvancesinZnOmaterialsanddevices[J].MaterSciEngB,2001,80:383—387. [2] SEGAWAY,OHTOMOA,KAWASAKIM,etal.Growth ofZnOthinfilmbyLaserMBE:LasingofExcitonatRoomTemperature[J].PhysStatSol(b),1997,202:669—672. [3] OHKUBOI,KOINUMAH,YASUDAT,etal.Structure andopticalpropertiesofZnO/Mg0.2Zn0.8Osuperlattices[J].ApplPhysLett,1999,75(7):980—982. [4] MAKINOT,CHIACH,NGUENT,etal.Room tempera tureluminescenceofexcitonsinZnO/(Mg,Zn)Omultiple quantumwellsonlattice matchedsubstrates[J].ApplPhysLett,2000,77(7):975—977. [5] COBLERL.SinteringcrystallinesolidsIIntermediateandfinal statediffusionmodels[J].JApplPhys,1961,32:787—792. [6] GUPTATK,COBLERL.Sinteringofzincoxide:1densification andgraingrowth[J].JAmCeramSoc,1968,51(9):521—525. [7]CHOIJungHae,HWANGNongMoon,KIMDohYeon.Pore boundaryseparationbehaviorduringsinteringofpure andBi2O3 dopedZnOceramics[J].JAmCeramSoc,2001;84(6):1398—1403. [8] 贺永宁,朱长纯,侯 洵.ZnO薄膜的制备和结构性能分析[J].真空科学与技术学报,2004,24(6):420—423.HEYongning,ZHUChangchun,HOUXun.JVacuumSciTechnol(inChinese),2004,24(6):420—423. [9] CRACIUNCV,BUNESCUMC.etal.Scanningelectron microscopyinvestigationoflaserablatedoxidetargets[J].J PhysD:ApplPhys,1999,32:1306—1312. [10] 孙承纬.激光辐照效应[M].北京:国防工业出版社,2002.55—58.SUNChengwei.LaserIrradiationEffect(inChinese).Bei jing:NationalDefenceIndustryPress,2002.55—58. [11] CLAEYSSENSFrederik,CHEESMANAndrew,HENLEY SJ,etal.Studiesoftheplumeaccompanyingpulsedultravi oletlaserablationofzincoxide[J].JApplPhys,2002,92(11):6886—6894.
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