[1] DAI N, LUO H, ZHANG F C, et al. Spin superlattice formation in ZnSe/Zn1-xMnxSe multilayers [J]. Phys Rev Lett, 1991, 67(27): 3824- 3827. [2] WOLF S A, AWSCHALOM D D, BUHRMAN R A, et al. Spintronics: a spin-based electronics vision for the future [J]. Science, 2001, 294: 1488-1495. [3] CHANG K, CHAN K S, PEETERS F M. Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot [J]. Phys Rev B, 2005, 71: 155309(1-6). [4] JIN Z W, FUKUMURA T, KAWASAKI M, et al. High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties [J]. Appl Phys Lett, 2001, 78: 3824-3826. [5] DIETL T, OHNO H, MATSUKURA F, et al. Zener model description of ferromagnetism in Zinc-blende magnetic semiconductors [J]. Science, 2000, 287: 1019-1022. [6] SATO K, KATAYAMA-YOSHIDA H. Stabilization of ferromagnetic states by electron doping in Fe-, Co- or Ni-doped ZnO [J]. Jpn J Appl Phys, 2001, 40: L334-L336. [7] UEDA K, TABATA H, KAWAI T. Magnetic and electric properties of transition-metal-doped ZnO films [J]. Appl Phys Lett, 2001, 79(7): 988-990. [8] LEE H J, JEONG S Y, CHO C R, et al. Study of diluted magnetic semiconductor: Co-doped ZnO [J]. Appl Phys Lett, 2002, 81(21): 4020- 4023. [9] TUAN A C, BRYAN J D, PAKHOMOV A B, et al. Epitaxial growth and properties of cobalt-doped ZnO on α-Al2O3 single-crystal substrates [J]. Phys Rev B, 2004, 70: 054424(1-9). [10] KHARE N, KAPPERS M J, WEI M, et al. Defect-induced ferromagnetism in Co-doped ZnO [J]. Adv Mater, 2006, 18: 1449- 1452. [11] UEDA K, TABATA H, KAWAI T. Magnetic and electric properties of transition-metal-doped ZnO films [J]. Appl Phys Lett, 2001, 79(7): 988-990. [12] YE X J, HOU D L, ZHONG W, et al. The magnetic mechanism of Zn0.93Co0.07O thin films [J]. Sci China Ser G: Phys, Mech Astronomy, 2009, 52(1): 21-25. [13] JUNGWIRTH T, ATKINSON W A, LEE B H, et al. Interlayer coupling in ferromagnetic semiconductor superlattices [J]. Phys Rev B, 1999, 59: 9818-9826. [14] HELLER R B, MCGANNON J, WEBER A H. Precision determination of the lattice constants of zinc oxide [J]. J App Phys, 1950, 21(10): 1283-1284. [15] SAGAR P, SHISHODIA P K, MEHRA R M. Influence of pH value on the quality of sol-gel derived ZnO films [J]. Appl Surf Sci, 2007, 253: 5419-5424. [16] LI C, FANG G, FU Q, et al. Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures [J]. J Cryst Growth, 2006, 292: 19-25. [17] ?ZGüR ü, ALIVOV Y I, LIU C, et al. A comprehensive review of ZnO materials and devices [J]. J Appl Phys, 2005, 98(4): 041301 (1-103). [18] VANHEUSDEN K, WARREN W L, SEAGER C H, et al. Mechanisms behind green photoluminescence in ZnO phosphor powders [J]. J Appl Phys, 1996, 79(10): 7983-7990. [19] SHI G, MO C M, CAI W L, et al. Photoluminescence of ZnO nanoparticles in alumina membrane with ordered pore arrays [J]. Solid State Commun, 2000, 115(5): 253-256. [20] PARK C H, ZHANG S B, WEI S H. Origin of p-type doping difficulty in ZnO: the impurity perspective [J]. Phys Rev B, 2002, 66(7): 073202(1-3). [21] WANG L G, ZUNGER A. Cluster-doping approach for wide-gap semiconductors: the case of p-type ZnO [J]. Phys Rev Lett, 2003, 90: 256401(1-4). [22] BARNES T M, OLSON K, WOlDEN C A. On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide [J]. Appl Phys Lett, 2005, 86: 112112(1-3). [23] HSU H S, HUANG J C A, HUANG Y H, et al. Evidence of oxygen vacancy enhanced room-temperature ferromagnetism in Co-doped ZnO [J]. Appl Phys Lett, 2006, 88(24): 242507(1-3). [24] LIU Q, GAN C L, YUAN C L, et al. Role of metallic cobalt in room temperature dilute ferromagnetic semiconductor Zn0.95Co0.05O1?δ [J]. Appl Phys Lett, 2008, 92(3): 032501(1-3). [25] 刘鹏, 岑嘉宝, 王亮, 等. Zn0.9O1-xCo0.1体系磁性和电子结构研究[J]. 功能材料, 2008, 39(8): 1289-1291. LIU Peng, QIN Jiabao, WANG Liang, et al. J Funct Mater (in Chinese), 2008, 39(8): 1289-1291. my husband cheated on me click here women who cheat on husband
|