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中子辐照6H-SiC晶体的退火特性及缺陷观测
作者:阮永丰 黄丽 王鹏飞 马鹏飞 贾敏 祝威 
单位:天津大学理学院 天津 300072 
关键词:碳化硅晶体 中子辐照 退火 位错 
分类号:O77+4
出版年,卷(期):页码:2012,40(3):436-442
DOI:
摘要:

  要:利用X射线衍射(XRD)研究中子辐照6H-SiC晶体的退火特性,发现辐照后晶体的XRD峰的半高宽(full width at half maximumFWHM)增大,之后又随退火温度的升高,在7001 230 ℃范围内呈线性规律的回复。以此规律为依据,可发展一种适合测量高温和复杂温度场温度的测温方法。采用添加了K2CO3KOH为腐蚀剂,对辐照前、辐照后及辐照后退火的掺氮6H-SiC单晶进行位错腐蚀观察,发现经中子辐照的晶体中位错面积比随退火温度的变化趋势与FWHM随退火温度的变化趋势基本一致,由此认为经中子辐照所产生的位错可能是导致XRD峰的FWHM变化的一个重要因素。

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Abstract: The annealing characteristic of neutron-irradiated 6H-SiC crystals was analyzed by X-ray diffraction (XRD). It was found that the full width at half maximum (FWHM) of the XRD peaks of the neutron-irradiated samples increased and recovered with increasing of the annealing temperature, showing a linear recovery law in the range of 700–1 230 ℃. Based on the law, a novel temperature measurement technique for the determination of high temperature and complicated temperature field was proposed. Moreover, the dislocation defects for the unirradiated, irradiated and post-irradiation annealed samples were investigated by using KOH added K2CO3 as a chemical etchant. The change trends of dislocation area ratio in the irradiated sample with the annealing temperature almost agreed with that of FWHM, indicating that the dislocations induced by neutron irradiation could be one of important factors for the changes of FWHM due to the thermal annealing treatment.

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基金项目:
中航集团(C20070716)资助项目。
作者简介:
第一作者:阮永丰(1946—),男,教授。
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