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Ba2TiSi2O8晶体的生长及其电弹常数的测定
作者:申传英 王继扬 张怀金 尹鑫 张园园 徐洪浩 韩树娟 
单位:山东大学 晶体材料国家重点实验室 济南 250100 
关键词:提拉法 硅钛钡石晶体 压电晶体 电弹常数 机电耦合系数 
分类号:O78
出版年,卷(期):页码:2012,40(9):1311-1315
DOI:
摘要:

摘  要:采用提拉法生长了尺寸为35 mm × 35 mm × 50 mm的透明Ba2TiSi2O8晶体。XRD结果表明所得晶体的物相为Ba2TiSi2O8单晶,浮力法测量晶体的密度为4.465 g/cm3。利用静电容法测量Ba2TiSi2O8晶体的相对介电常数为ε11/ε0 = 16.35和ε33/ε0 = 12.38。干涉法测量的压电常数为d15 = 17.55 pC/N、d31 = –1.49 pC/N,谐振法测量的机电耦合系数为k33 = 10%,弹性常数sE11 = 7.5 × 10–12、sE33 = 13.3 × 10–12、sE44 = 33.6 × 10–12 m2/N和sE66 = 12.8 × 10–12 m2/N。并测量了Ba2TiSi2O8晶体的电阻率为pa = 9.43 × 1013 Ω•cm、pc = 5.84 × 1013 Ω?cm。通过测量发现,Ba2TiSi2O8晶体压电常数远大于石英的,且具有大的机电耦合系数和较大的电阻率,是一种优良的压电晶体材料。

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Abstract: Ba2TiSi2O8 crystals (the size: 35 mm × 35 mm × 50 mm) were grown by the Czochralski method. The results by X-ray diffraction indicated that the as-grown crystals composed of Ba2TiSi2O8 single phase. The density of Ba2TiSi2O8 measured by buoyancy method was 4.465 g/cm3. The relative dielectric constants of Ba2TiSi2O8 crystal determined through an electrostatic capacitive method were ε11/ε0 = 16.35 and ε33/ε0 = 12.38. The piezoelectric constants (i.e., d15 = 17.55 pC/N and d31 = –1.49 pC/N) were measured by an interference method. The electromechanical coupling coefficients (i.e., k33 = 10%) and elastic constants (i.e., sE11 = 7.5 × 10–12 m2/N, sE33 = 13.3 × 10–12 m2/N, sE44 = 33.6 × 10–12 m2/N, and sE66 = 12.8 × 10–12 m2/N) were obtained by a resonance technique. The electrical resistivities (i.e., pa = 9.43 × 1013 Ω?cm and pc = 5.84 × 1013 Ω?cm) were also determined. It is found that the piezoelectric constant of Ba2TiSi2O8 crystal is greater than that of quartz. In addition, the Ba2TiSi2O8 crystal possesses a greater electromechanical coupling coefficient and a greater electrical resistivity. This Ba2TiSi2O8 crystal could be used as a superior piezoelectric crystalline material.

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基金项目:
国家自然科学基金重点项目(51032004)和国家重点基础研究发展计划(2010CB833103)资助
作者简介:
第一作者:申传英(1983—),女,硕士。 通信作者:王继扬(1946—),男,教授。
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参考文献:

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