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常压烧结碳化硅陶瓷的表面裂纹及力学性能的研究
作者:杨晓 黄政仁 刘学建 
单位:中国科学院上海硅酸盐研究所 国家重点实验室 上海 200050 中国 
关键词:碳化硅陶瓷 表面裂纹尺寸 表面裂纹倾斜角 弯曲强度 
分类号:TQ174.75
出版年,卷(期):页码:2014,42(7):00-00
DOI:
摘要:

SiC陶瓷作为最有潜力的结构陶瓷材料之一,迫切需要对其材料缺陷与力学性能的关系、进而与材料可靠性之间的关系进行系统的研究。本研究以常压烧结碳化硅陶瓷材料(简称SSiC陶瓷)为研究对象,开展陶瓷表面裂纹及其对力学性能的影响研究。结果表明,当裂纹尺寸小于40 μm时,SSiC陶瓷的弯曲强度迅速降低55 %;裂纹尺寸约50 μm以后,弯曲强度的下降趋于平缓。通过曲线拟合及实验验证得到了弯曲强度对不同裂纹尺寸的关系式。通过对裂纹方向的研究,建立了裂纹方向对材料弯曲强度产生影响的模型。

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Silicon carbide ceramic is one of the most potential structural ceramics, and it is essential to investigate the influenceof material defects on the mechanical properties and material reliability. Silicon carbide (SiC) ceramics were prepared via solid-phase sintering. The influence of surface cracks on the corresponding bending strength was investigated. The results show that the strength of the ceramic is decreased by 55% when the crack size is < 40 μm, and the decreasing trend of bending strength becomes slower in the presence of the longer cracks. A fitted equation was proposed to calculate the bending strength as a function of crack size. The inclined angle of surface crack was also discussed, and a corresponding model was established to analyze the influence of crack inclined angle on the bending strength.

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基金项目:
作者简介:
通讯作者:杨晓(1987—),女,博士。
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参考文献:

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