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退火时间对Bi/Te多层薄膜结构和热电性能的影响
作者:李秦\檀柏梅\张建新2 牛新环\高宝红\田会娟 
单位:1.河北工业大学电子信息工程学院 天津300401 2.天津工业大学 中空纤维膜材料与膜过程省部共建国家重点实验室 天津300387 
关键词:铋/碲多层薄膜 退火时间 微观结构 热电性能 磁控溅射 
分类号:TN304
出版年,卷(期):页码:2016,44(1):0-0
DOI:
摘要:

 采用磁控溅射法在玻璃衬底上室温沉积厚度不同的Bi/Te多层薄膜,在氩气保护下对薄膜在150 蚓进行不同时间退 火处理,研宄了退火时间对Bi/Te多层薄膜物相组成、微观形貌、表面粗糙度和热电性能的影响。结果表明:退火过程使Bi、 Te原子在相邻单质层界面上产生了强烈的扩散反应,生成以Bi2Te3为主相的Bi-Te化合物;随退火时间的延长,薄膜的界面 空洞增多,表面粗糙度变大。短时间退火可提高薄膜的热电性能;而随退火时间的延长,量子尺寸效应逐渐显现,薄膜的载 流子浓度、迀移率、电导率和Seebeck系数均出现明显的振荡现象,沉积的单质层越厚,振荡周期越大

 Bi/Te multilayer thin films with different thicknesses were deposited on a glass substrate via magnetron sputtering at room temperature. The thin films were annealed in Ar air at 150 C for different time. The effect of annealing time on the phase composition, micro-topography, root mean square roughness and thermoelectric properties of Bi/Te multilayer thin films was investigated. The results show that the interdiffusion between Bi and Te atoms in adjacent interface is promoted after annealing. The Bi/Te multilayer thin films are transformed into Bi-Te-based compounds. Bi^Te〗 is the major compound phase existing in the annealed samples. The quantity of interface voids and the surface roughness increase significantly with the increase of annealing time. The thermoelectric properties of thin films can be improved by annealing for a short time. However, the carrier concentration, mobility, conductivity and Seebeck coefficient of Bi/Te multilayer thin films all appear an oscillatory behavior when the annealing time increases, which is attributed to quantum size effects. Meanwhile, the thicker the thickness of the simple deposited layer, the greater the period of oscillatory will be.

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