硅酸盐学报

光学浮区法生长掺铟氧化镓单晶及其性能

作者：吴庆辉1 4 唐慧丽2 3 苏良碧1 4 罗平2 3 钱小波1 4 吴锋2 3 徐军2 3

单位：1. 中国科学院上海硅酸盐研究所人工晶体研究中心上海 201800 2. 同济大学物理科学与工程学院上海200092 3. 上海蓝宝石单晶工程技术研究中心筹上海 201899 4. 中国科学院上海硅酸盐研究所透明光功能无机材料重点实验室上海 201899

关键词：铟掺杂氧化镓单晶晶体生长浮区法

分类号：O782

出版年,卷(期):页码：2017,45(4):548-552

DOI：10.14062/j.issn.0454-5648.2017.04.14

摘要：

采用光学浮区法生长了尺寸 (7~9 mm)×(30~35 mm)的β-Ga2O3:In单晶。X射线衍射物相分析表明，β-Ga2O3:In单晶仍属于单斜晶系。研究了不同In掺杂量的β-Ga2O3:In单晶的吸收光谱和电学性能。结果表明：与纯β-Ga2O3单晶相比，β-Ga2O3:In单晶在红外波段存在明显吸收。β-Ga2O3:In单晶的电导率在10–2量级，Holl载流子浓度可以达到6×1019/cm2，说明掺杂In3+对β-Ga2O3单晶的电学性能有明显改善。

β-Ga2O3:In single crystal with 30?35 mm in length and 7?9 mm in diameter was grown by an optical floating zone method. Based on the X-ray diffraction analysis, β-Ga2O3:In single crystal obtained belongs to a monoclinic crystal system. The absorption spectra and electric properties of β-Ga2O3:In crystal doped with different mole fractions of In3+ were investigated. The results indicate that compared to pure β-Ga2O3 crystal, β-Ga2O3:In single crystal has an intense absorption in the infrared band. The conductivity of β-Ga2O3:In single crystal is above 10–2 S/cm, and the carrier density can achieve 6×1019/cm2. It is indicated that the doping of In3+ could improve the electrical properties of the β-Ga2O3 single crystal.

基金项目：

国家自然科学基金项目(91333106)；上海科委科技攻关项目 (13521102700)；上海蓝宝石单晶工程技术研究中心(筹) (14DZ2252500)资助项目；中央高校基本科研业务费专项资金项目(2015KJ040, 1370219229)。

作者简介：

吴庆辉(1991—)，男，硕士研究生。

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