硅酸盐学报

MgO掺杂对氧化锌线性陶瓷电阻的影响

作者：刘建科1 张瑞婷2 宋帆1 徐亚宁2 田书凯1

单位：(1. 陕西科技大学文理学院西安 710021 2. 陕西科技大学材料科学与工程学院西安 710021)

分类号：

出版年,卷(期):页码：2019,47(7):0-0

DOI：

摘要：

利用固相烧结法制备出基础配方为ZnO?Al2O3?MgO?Fe2O3?TiO2?SiO2的ZnO线性陶瓷电阻。研究了MgO掺杂量对ZnO线性陶瓷电阻微观结构、阻抗、阻温特性和阻频特性的影响。结果表明：在MgO掺杂量为5% (质量分数)时，ZnO线性陶瓷电阻的综合性能最好，其晶粒尺寸较为均匀，相对密度最高，电阻率为256 647 Ω•cm，非线性系数为1.03，阻温系数为?5.45×10–3/℃。

The zinc oxide (ZnO) linear ceramic resistance was synthesized from ZnO?Al2O3?MgO?Fe2O3?TiO2?SiO2 via solid-state sintering. The effect of MgO doping on the microstructure, impedance, temperature-resistance characteristics and impedance-frequency characteristics was investigated. The results show that the ZnO linear ceramic resistance doping with 5%MgO has the optimum comprehensive performance. This resistance synthesized has relatively uniform grain size, maximum relative density, resistivity of 256 647 Ω•cm•cm, nonlinear coefficient of 1.03, and resistance temperature coefficient of ?5.45×10–3/℃.

基金项目：

国家自然科学基金项目(51272145，50972087)资助。

作者简介：

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