硅酸盐学报

HVO2薄膜相变的特性及热稳定性

作者：李昆鹏祝柏林王崇杰陶冶吴隽甘章华刘静

分类号：TN304

出版年,卷(期):页码：2019,47(8):0-0

DOI：

摘要：

采用射频溅射磁控溅射技术在Ar+H2气氛下，以V2O5为溅射靶材在玻璃基片上制备了H掺杂VO2(HVO2)薄膜，研究了H2流量和退火处理对HVO2薄膜的结构、光电性能和热稳定性的影响。结果表明：H2流量可以控制薄膜中H的含量，微量H的掺杂使HVO2薄膜相变温度降低到室温附近，过量的H掺杂会使薄膜处于金属态。当500 ℃下退火3 h后，薄膜物相、相变等特征明显变化，此时薄膜中的H不能稳定存在于VO2晶格而溢出薄膜。当退火温度≤450 ℃、退火时间≤6 h时，薄膜保持较高的稳定性，这为室温附近使用HVO2薄膜提供了基础。另外，随H2流量增加，薄膜的平均透射率小幅度增加，最终稳定在37%左右。随着退火温度的增加，未引入H2制备的VO2薄膜的平均透射率在400 ℃退火后为30.9%，在450和500 ℃退火后为35.8%左右。H2流量为0.1~0.5 mL/min时制备的样品在3种退火温度下的透射率均保持在38%左右。

基金项目：

高性能陶瓷和超微结构国家重点实验室开放课题基金(SKL201110SIC)。

作者简介：

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