硅酸盐学报

复合离子(W0.5Mg0.5)4+掺杂BNBT陶瓷的微结构及低场/高场压电性能

作者：霍子伟1 杨玲1 许积文1 2 窦闰镨1 周昌荣1 2 郑远蕾1 张秀云1 王华1 2

单位：(1. 桂林电子科技大学材料科学与工程学院广西桂林 541004 2. 桂林电子科技大学广西信息材料重点实验室广西桂林 541004)

关键词：钛酸铋钠钛酸钡钨镁复合离子压电应变介电

分类号：TQ174

出版年,卷(期):页码：2019,47(12):0-0

DOI：

摘要：

采用固相烧结法制备了(W0.5Mg0.5)4+复合离子掺杂的(Bi0.5Na0.5)0.94Ba0.06Ti1–x(W0.5Mg0.5)xO3(BNBT–xWM)无铅陶瓷，研究了(W0.5Mg0.5)4+复合离子掺杂量对BNBT陶瓷的表面形貌、微观结构，以及铁电、应变、压电、介电等电学性能的影响。结果表明：(W0.5Mg0.5)4+复合离子进入了BNBT陶瓷的B位并形成了单一的钙钛矿结构，且陶瓷样品晶界清晰，结构致密。(W0.5Mg0.5)4+掺杂增大了剩余极化强度和饱和极化强度。(W0.5Mg0.5)4+复合离子的掺杂使电致应变曲线由蝴蝶形变为嫩芽形，在x=0.03时获得0.429%(质量分数)的高电致应变响应，d33*的最大值为833.1 pm/V，其外加高场仅有60 kV/cm。在x=0.02时其低场小信号的压电性能d33有235 pC/N。BNBT–xWM陶瓷的介电常数随着掺杂含量的增多逐渐降低且平坦化，同时向弛豫铁电体转变。

基金项目：

国家自然科学基金(61741105, 11664006)；广西自然科学基金(2017GXNSFDA198024, 2016GXNSFAA380069)。

作者简介：

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